the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2002 mos field effect transistor pa1819 p-channel mos field effect transistor for switching data sheet document no. g16267ej1v0ds00 (1st edition) date published september 2002 ns cp(k) printed in japan description the pa1819 is a switching device that can be driven directly by a 4.0 v power source. this device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. features ? 4.0 v drive available ? low on-state resistance r ds(on)1 = 12 m ? max. (v gs = ? 10 v, i d = ? 6.0 a) r ds(on)2 = 18.5 m ? max. (v gs = ? 4.5 v, i d = ? 6.0 a) r ds(on)3 = 22 m ? max. (v gs = ? 4.0 v, i d = ? 6.0 a) ? built-in g-s protection diode against esd ordering information part number package pa1819gr-9jg power tssop8 absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t a = 25c) i d(dc) m 12 a drain current (pulse) note1 i d(pulse) m 48 a total power dissipation note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on ceramic substrate of 5000 mm 2 x 1.1 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 14 85 6.4 0.2 4.4 0.1 1.0 0.2 0.145 0.055 0.1 1 : drain1 2, 3 : source1 4 : gate1 5 : gate2 6, 7 : source2 8 : drain2 0.8 max. 3.15 0.15 3.0 0.1 0.65 0.10 m 0.27 +0.03 ?0.08 0.25 0.5 3 +5 ?3 0.6 +0.15 ?0.1 1.2 max. 0.10.05 1.00.05 equivalent circuit source body diode gate protection diode gate drain 1, 2, 3: source 4: gate 5, 6, 7, 8: drain
data sheet g16267ej1v0ds 2 pa1819 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1.0 a gate leakage current i gss v gs = m 20 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1.0 ma ? 1.0 ? 2.0 ? 2.5 v forward transfer admittance | y fs | v ds = ? 10 v, i d = ? 6.0 a 11 23 s drain to source on-state resistance r ds(on)1 v gs = ? 10 v, i d = ? 6.0 a 9.8 12 m ? r ds(on)2 v gs = ? 4.5 v, i d = ? 6.0 a 13.9 18.5 m ? r ds(on)3 v gs = ? 4.0 v, i d = ? 6.0 a 16.4 22 m ? input capacitance c iss v ds = ? 10 v 2430 pf output capacitance c oss v gs = 0 v 690 pf reverse transfer capacitance c rss f = 1.0 mhz 420 pf turn-on delay time t d(on) v dd = ? 15 v, i d = ? 6.0 a 19 ns rise time t r v gs = ? 10 v 17 ns turn-off delay time t d(off) r g = 10 ? 160 ns fall time t f 160 ns total gate charge q g v dd = ? 24 v 45 nc gate to source charge q gs v gs = ? 10 v 5.5 nc gate to drain charge q gd i d = ? 12 a 15 nc body diode forward voltage v f(s-d) i f = 12 a, v gs = 0 v0.83v reverse recovery time t rr i f = 12 a, v gs = 0 v50ns reverse recovery charge q rr di/dt = 100 a/ s40nc test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet g16267ej1v0ds 3 pa1819 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 p t - total power dissi p ation - w 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 175 mounted on ceramic substrate of 5000 mm 2 x 1.1 mm mounted on fr-4 board of 2500 mm 2 x 1.6 mm t a - ambient temperature - ct a - ambient temperature - c forward bias safe operating area i d - drain current - a - 0.01 - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 100 ms 10 ms i d(pulse) i d(dc) pw = 1 ms r ds(on) limited (v gs = ? 10 v) dc single pulse mounted on ceramic substrate of 5000 mm 2 x 1.1 mm v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.1 1 10 100 1000 single pulse mounted on fr-4 board of 2500 mm 2 x 1.6 mm 125 c/w mounted on ceramic substrate of 5000 mm 2 x 1.1 mm 62.5 c/w pw - pulse width - s 1 m 10 m 100 m 1 10 100 1000
data sheet g16267ej1v0ds 4 pa1819 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 - 10 - 20 - 30 - 40 - 50 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 pulsed ? 4.0 v v gs = ? 10 v ? 4.5 v i d - drain current - a - 0.0001 - 0.001 - 0.01 - 0.1 - 1 - 10 - 100 - 1- 1.5- 2- 2.5- 3- 3.5- 4 v ds = ? 10 v pulsed t a = 125 c 75 c 25 c ? 25 c v ds - drain to source voltage - v v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v - 1.4 - 1.6 - 1.8 - 2.0 - 2.2 - 2.4 -50 0 50 100 150 v ds = ? 10 v i d = ? 1.0 ma | y fs | - forward transfer admittance - s 0.1 1 10 100 - 0.01 - 0.1 - 1 - 10 - 100 v ds = ? 10 v pulsed t a = ? 25 c 25 c 75 c 12 5 c t ch - channel temperature - ci d - drain current - a drain to source on-state resistance vs. channel temperature drain to source on-state resistance vs.gate to source voltage 0 10 20 30 -50 0 50 100 150 i d = ? 6.0 a pulsed v gs = ? 4.0 v ? 4.5 v ? 10 v 0 10 20 30 0 - 5 - 10 - 15 - 20 i d = ? 6.0 a pulsed r ds(on) - drain to source on-state resistance - m ? t ch ? channel temperrature - c r ds(on) - drain to source on-state resistance - m ? v gs - gate to source voltage - v
data sheet g16267ej1v0ds 5 pa1819 drain to source on-state resistance vs. drain current drain to source on-state resistance vs. drain current 0 10 20 30 - 0.01 - 0.1 - 1 - 10 - 100 v gs = ? 10 v pulsed t a = 125 c 75 c 25 c ? 25 c 0 10 20 30 - 0.01 - 0.1 - 1 - 10 - 100 v gs = ? 4.5 v pulsed t a = 125 c 75 c 25c ? 25c r ds(on) - drain to source on-state resistance - m ? i d - drain current - a r ds(on) - drain to source on-state resistance - m ? i d - drain current - a drain to source on-state resistance vs. drain current capacitance vs. drain to source voltage 0 10 20 30 - 0.01 - 0.1 - 1 - 10 - 100 v gs = ? 4.0 v pulsed t a = 125 c 75 c 25 c ? 2 5 c 100 1000 10000 - 0.1 - 1 - 10 - 100 v gs = 0 v f = 1.0 mhz c iss c oss c rss r ds(on) - drain to source on-state resistance - m ? i d - drain current - a c iss , c oss , c rss - ca p acitance - p f v ds - drain to source voltage - v switching characteristics source to drain diode forward voltage 10 100 1000 10000 - 0.01 - 0.1 - 1 - 10 - 100 v dd = ? 15 v v gs = ? 10 v r g = 10 ? t d(off) t d(on) t f t r 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 v gs = 0 v pulsed t d(on) , t r , t d(off) , t f - switching time - ns i d - drain current - a i f - diode forward current - a v f(s-d) - source to drain voltage - v
data sheet g16267ej1v0ds 6 pa1819 dynamic input/output characteristics v gs - gate to source voltage - v 0 - 2 - 4 - 6 - 8 - 10 0 1020304050 i d = ? 12 a v dd = ? 6.0 v ? 15 v ? 24 v q g - gate charge - nc
data sheet g16267ej1v0ds 7 pa1819 [memo]
pa1819 m8e 00. 4 the information in this document is current as of september, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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